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| Ordering number : ENN7129 MCH3109 / MCH3209 PNP / NPN Silicon Epitaxial Planar Transistors MCH3109 / MCH3209 DC / DC Converter Applications Preliminary Applications * Package Dimensions unit : mm 2194A [MCH3109 / MCH3209] 0.25 Relay drivers, lamp drivers, motor drivers, strobes. Features * * * * * * Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 0.3 3 0.15 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Base 2 : Emitter 3 : Collector Specifications ( ) : MCH3109 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions 0.85 1 2 (Top view) SANYO : MCPH3 Unit (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.8 150 --55 to +150 V V V A A mA W C C Ratings Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max (--)0.1 (--)0.1 200 (380)450 (25)20 560 MHz pF Unit A A Marking : MCH3109 : AJ / MCH3209 : CJ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3001 TS IM TA-3372, 3373 No.7129-1/5 MCH3109 / MCH3209 Continued from preceding page. Parameter Symbol VCE(sat)1 VCE(sat)2 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1.5A, IB=(--)30mA IC=(--)1.5A, IB=(-)750mA IC=(--)1.5A, IB=(--)30mA IC=(--)10A, IE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)5 (50)30 (270)300 (25)15 Ratings min typ (--155) 120 (--)105 (-)0.83 max (--230) 180 (--)155 (--)1.2 Unit mV mV mV V V V V ns ns ns Collector-to-Emitter Saturation Voltage Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=12V RB RL IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) A mA --40m --3 0 0 --2 --10m A Collector Current, IC -- A Collector Current, IC -- A --1.6 --8mA 1.6 20m mA A MCH3109 40mA 50mA 30mA --2.0 IC -- VCE 2.0 IC -- VCE 10 mA 8m A 6mA A --1.2 --50m --6mA --4mA 4mA 1.2 --0.8 0.8 2mA --2mA --0.4 0.4 0 0 --200 --400 --600 --800 IB=0 --1000 IT03993 0 0 200 400 600 MCH3209 IB=0 800 1000 IT03994 Collector-to-Emitter Voltage, VCE -- mV --3.5 Collector-to-Emitter Voltage, VCE -- mV 3.5 IC -- VBE MCH3109 VCE= --2V Collector Current, IC -- A IC -- VBE MCH3209 VCE=2V --3.0 3.0 Collector Current, IC -- A --2.5 2.5 --2.0 2.0 Ta=75C 25C --25C --1.5 1.5 --1.0 1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT03995 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT03996 Base-to-Emitter Voltage, VBE -- V Base-to-Emitter Voltage, VBE -- V Ta=75C 25C --25C No.7129-2/5 MCH3109 / MCH3209 1000 7 5 hFE -- IC Ta=75C --25C 25C MCH3109 VCE= --2V DC Current Gain, hFE 1000 7 5 3 2 hFE -- IC MCH3209 VCE=2V Ta=75C --25C 25C DC Current Gain, hFE 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 1000 7 5 7 --10 IT03997 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 5 7 10 IT03998 f T -- IC Gain-Bandwidth Product, f T -- MHz f T -- IC MCH3209 VCE=10V Gain-Bandwidth Product, f T -- MHz 5 3 2 MCH3109 VCE= --10V 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 0.01 2 3 5 7 100 2 3 5 7 1000 2 3 Collector Current, IC -- mA 2 IT03999 2 Cob -- VCB Collector Current, IC -- mA IT04000 Cob -- VCB MCH3209 f=1MHz MCH3109 f=1MHz Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 IT04001 Output Capacitance, Cob -- pF 100 7 5 100 7 5 3 3 2 2 10 --1.0 --10 10 1.0 2 3 5 7 10 2 3 5 IT04002 Collector-to-Base Voltage, VCB -- V --1.0 7 5 Collector-to-Base Voltage, VCB -- V 1.0 7 5 VCE(sat) -- IC MCH3109 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC MCH3209 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT04003 3 2 0.1 7 5 3 2 0.01 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04004 C 75 Ta= C 5C 2 --25 C 75 Ta= C --25 25 C --0.001 --0.01 0.001 0.01 Collector Current, IC -- A Collector Current, IC -- A No.7129-3/5 MCH3109 / MCH3209 --10 7 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V MCH3109 IC / IB=50 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 VCE(sat) -- IC MCH3209 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 C 75 Ta= C 5C --25 2 C 75 Ta= C 5C --25 2 --0.01 --0.01 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10 7 5 7 --10 IT04005 0.01 0.01 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 10 5 7 10 IT04006 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V MCH3109 IC / IB=50 VBE(sat) -- IC MCH3209 IC / IB=50 7 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --1.0 7 5 3 2 Ta= --25C 75C 25C 1.0 7 5 3 2 Ta= --25C 75C 25C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 7 5 5 7 --10 IT04007 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1.0 5 7 10 IT04008 ASO ICP=5A IC=3A 10 PC -- Ta 10 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1m s 0 s 0.8 50 s 0 M ou ms nt ed DC 10 op era on 0m s 0.6 ac er ic am tio n bo 0.4 ar d m 00 (6 0.01 0.1 MCH3109 / MCH3209 Ta=25C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 m 2! 0.2 ) m 8m 0. 0 0 IT04010 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C 50 100 150 200 IT04011 No.7129-4/5 MCH3109 / MCH3209 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7129-5/5 |
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